Invention Grant
- Patent Title: Sensing circuit and method for multi-level memory cell
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Application No.: US17241112Application Date: 2021-04-27
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Publication No.: US11308996B2Publication Date: 2022-04-19
- Inventor: Che-Wei Chang
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/06 ; G11C7/22 ; G11C7/10

Abstract:
A sensing circuit includes a cell clock generator, a reference clock generator, a counter, a latching signal generator, a latch and a count-to-state conversion circuit. The cell clock generator receives a cell current from a selected memory cell, and converts the cell current into a cell clock signal. The reference clock generator converts a reference current into a reference clock signal. The count receives the cell clock signal, and generates a count value. When a pulse number of the reference clock signal reaches a predetermined count value, the latching signal generator activates a latching signal. When the latching signal is activated, the latch issues a latched count value. The count-to-state conversion circuit receives the latched count value, and issues a state value. A storage state of the selected memory cell is determined according to the state value.
Public/Granted literature
- US20220020402A1 SENSING CIRCUIT AND METHOD FOR MULTI-LEVEL MEMORY CELL Public/Granted day:2022-01-20
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