Invention Grant
- Patent Title: Dragging first pass read level thresholds based on changes in second pass read level thresholds
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Application No.: US17112755Application Date: 2020-12-04
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Publication No.: US11309020B2Publication Date: 2022-04-19
- Inventor: Michael Sheperek , Larry J. Koudele , Bruce A. Liikanen
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/56 ; G11C5/04
Abstract:
A processing device performs a multi-pass programming operation on the memory device resulting in first pass programming distributions and second pass programming distributions. One or more read level thresholds between the second pass programming distributions are changed. Responsive to changing the one or more read level thresholds between the second pass programming distributions, one or more read level thresholds between the first pass programming distributions are adjusted based on the changes to the one or more read level thresholds between the second pass programming distributions.
Public/Granted literature
- US20210183439A1 DRAGGING FIRST PASS READ LEVEL THRESHOLDS BASED ON CHANGES IN SECOND PASS READ LEVEL THRESHOLDS Public/Granted day:2021-06-17
Information query
