The present disclosure includes apparatuses, methods, and systems for memory cell programming that cancels threshold voltage drift. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of two possible data states by applying a first voltage pulse to the memory cell, wherein the first voltage pulse has a first polarity and a first magnitude, and applying a second voltage pulse to the memory cell, wherein the second voltage pulse has a second polarity that is opposite the first polarity and a second magnitude that can be greater than the first magnitude.