Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16630690Application Date: 2017-10-26
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Publication No.: US11309232B2Publication Date: 2022-04-19
- Inventor: Soichiro Umeda , Takenori Ishioka
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Marshall, Gerstein & Borun LLP
- International Application: PCT/JP2017/038755 WO 20171026
- International Announcement: WO2019/082343 WO 20190502
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/498 ; H01L23/00

Abstract:
A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.
Information query
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