-
公开(公告)号：US12051536B2
公开(公告)日：2024-07-30
申请号：US17256614
申请日：2018-06-29
发明人： Kosuke Ikeda , Yoshiaki Hiruma
CPC分类号： H01F27/327 , H01F27/22 , H01F27/29
摘要： An electronic device has a primary coil 10; a secondary coil 20 disposed to face the primary coil 10; a coil sealing part 50 sealing the primary coil 10 and the secondary coil 20 and being made of sealing resin; a primary-side sealing part 150 sealing a primary-side electronic element 110 electrically connected to the primary coil 10; and a secondary-side sealing part 250 sealing a secondary-side electronic element 210 electrically connected to the secondary coil 20.
-
公开(公告)号：US12040258B2
公开(公告)日：2024-07-16
申请号：US17439401
申请日：2019-03-25
IPC分类号： H01L23/495 , H01L23/00 , H01L23/31
CPC分类号： H01L23/49503 , H01L23/3107 , H01L23/49524 , H01L23/49541 , H01L23/49551 , H01L24/38 , H01L24/40 , H01L24/41 , H01L24/84 , H01L2924/181
摘要： A semiconductor apparatus according to the present invention is a semiconductor apparatus on which a plurality of external terminals are disposed. The semiconductor apparatus includes: a first lead portions having die pads, first outer leads and first inner leads; chips; second lead portions having second outer leads and second inner lead; and a resin. On at least one of the first inner leads, the second inner leads and the die pads, a terminal temperature equalizing structure which restricts a heat transfer amount of heat transferred from the chips to predetermined external terminals, and equalizes respective terminal temperatures of a plurality of external terminals is formed.
According to the semiconductor apparatus of the present invention, it is possible to prevent specific external terminals from becoming extremely high temperature when the semiconductor apparatus is mounted.-
公开(公告)号：US20240213308A1
公开(公告)日：2024-06-27
申请号：US18395627
申请日：2023-12-25
发明人： Azusa SATO , Yoshifumi MATSUZAKI
CPC分类号： H01L29/0607 , H01L29/0684 , H01L29/7801
摘要： A semiconductor device includes, a semiconductor base body, an insulation layer that has an opening, and a surface electrode. The semiconductor base body includes a drift region, a p-type dopant region, and a peripheral dopant region. The p-type dopant region has a high concentration region that is formed in a region where the high concentration region overlaps with the p-type dopant region. A plurality of recombination centers are formed in the semiconductor base body, an inner peripheral end of the peripheral dopant region on the surface of the semiconductor base body is positioned on an inner peripheral side of an end portion of the opening, and a length from the inner peripheral end of the peripheral dopant region to the end portion of the opening is 0.01 μm or more to 130 μm or less.
-
公开(公告)号：US20240006510A1
公开(公告)日：2024-01-04
申请号：US18251906
申请日：2022-09-28
发明人： Kanae ENDO , Tadashi INOUE , Yukihiro SHIBATA
CPC分类号： H01L29/66363 , H01L29/74 , H01L29/36
摘要： There is provided a thyristor with desensitized gate sensitivity. In accordance with this, the third P-type semiconductor layer, which is connected to a gate electrode, has an impurity concentration higher than that of a second P-type semiconductor layer. A fourth P-type semiconductor layer, which is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer, is disposed below the cathode electrode, and has an impurity concentration higher than that of the second P-type semiconductor layer.
-
公开(公告)号：US11557564B2
公开(公告)日：2023-01-17
申请号：US15733890
申请日：2019-04-08
发明人： Soichiro Umeda , Atsushi Kyutoku
IPC分类号： H01L23/00
摘要： A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.
-
公开(公告)号：US20230011041A1
公开(公告)日：2023-01-12
申请号：US17857227
申请日：2022-07-05
发明人： Soichiro UMEDA , Atsushi KYUTOKU
IPC分类号： H01L23/31 , H01L23/495 , H01L23/498 , H01L23/18
摘要： A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal having a flat plate-shape that is connected to a first electrode of the semiconductor element; a second terminal having a flat plate-shape that is connected to the first conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, and the semiconductor element. Each of the first terminal and the second terminal includes: an inner terminal portion disposed inside the sealing resin; and an outer terminal portion disposed in a state of being exposed to an exterior of the sealing resin, and a female thread portion is provided in the outer terminal portion of each of the first terminal and the second terminal.
-
公开(公告)号：US11462974B2
公开(公告)日：2022-10-04
申请号：US16333992
申请日：2018-06-08
IPC分类号： H02K11/40 , H02K11/25 , H02K11/33 , H01L23/31 , H01L23/34 , H01L23/495 , H02M7/00 , H02M7/48
摘要： A semiconductor module is configured to convert a direct current to a three-phase alternating current, and to supply the three-phase alternating current to a three-phase motor to drive the three-phase motor, wherein the first ground terminal GND1, the second ground terminal GND2, and the third ground terminal GND3 are arranged along the second side B2 to be separated from one another and electrically isolated from one another.
-
公开(公告)号：US20220148943A1
公开(公告)日：2022-05-12
申请号：US17439401
申请日：2019-03-25
IPC分类号： H01L23/495
摘要： A semiconductor apparatus according to the present invention is a semiconductor apparatus on which a plurality of external terminals are disposed. The semiconductor apparatus includes: a first lead portions having die pads, first outer leads and first inner leads; chips; second lead portions having second outer leads and second inner lead; and a resin. On at least one of the first inner leads, the second inner leads and the die pads, a terminal temperature equalizing structure which restricts a heat transfer amount of heat transferred from the chips to predetermined external terminals, and equalizes respective terminal temperatures of a plurality of external terminals is formed.
According to the semiconductor apparatus of the present invention, it is possible to prevent specific external terminals from becoming extremely high temperature when the semiconductor apparatus is mounted.-
公开(公告)号：US11280812B2
公开(公告)日：2022-03-22
申请号：US16494218
申请日：2017-11-24
摘要： A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.
-
公开(公告)号：US11276663B2
公开(公告)日：2022-03-15
申请号：US16614316
申请日：2017-05-19
发明人： Kosuke Ikeda , Osamu Matsuzaki
IPC分类号： H01L23/00 , H01L23/492 , H01L23/495 , H01L25/07 , H01L23/367 , H01L23/538
摘要： An electronic module has a first substrate 11, a first conductor layer 12 that is provided on one side of the first substrate 11, a first electronic element 13 that is provided on one side of the first conductor layer 12, a second electronic element 23 that is provided on one side of the first electronic element 23, and a second connecting body 70 that has a second head part 71 provided on one side of the second electronic element 23 and an extending part 75 extending from the second head part 71 to the other side and abutting against the first substrate 11 or the first conductor layer 12.
-
-
-
-
-
-
-
-
-
搜索结果
434 条记录 (耗时 0.028 秒)
