Invention Grant
- Patent Title: Semiconductor device package
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Application No.: US16833330Application Date: 2020-03-27
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Publication No.: US11309264B2Publication Date: 2022-04-19
- Inventor: Wen Hung Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01Q1/22

Abstract:
The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
Public/Granted literature
- US20210305180A1 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-09-30
Information query
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