Disclosed is a memory drive device. The memory drive device comprises a control circuit, a reference voltage generation circuit, and a first switch. The control circuit is used to generate a first signal according to an input signal. The reference voltage generation circuit comprises a reference resistor and is used to generate a reference signal according to the first signal. The first switch is coupled to a memory resistor and is used to generate a drive signal according to the first signal so as to set a resistance value of the memory resistor. When the input signal is decreased and a resistance value of the memory resistor is greater than a resistance value of the reference resistor, the time when the drive signal is decreased is greater than the time when the reference signal is decreased.