Invention Grant
- Patent Title: Method for manufacturing semiconductor package having redistribution layer
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Application No.: US16293697Application Date: 2019-03-06
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Publication No.: US11315802B2Publication Date: 2022-04-26
- Inventor: Il Hwan Kim , Un Byoung Kang , Chung Sun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0099284 20180824
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L23/498 ; H01L21/683 ; H01L23/00

Abstract:
A method of manufacturing a semiconductor package includes forming a plurality of trenches at a first surface of a silicon substrate, forming a conductive pad inside each of the plurality of trenches, forming a redistribution layer on the first surface of the silicon substrate, forming an external connection terminal on a first surface of the redistribution layer, removing the silicon substrate to expose each conductive pad, mounting a semiconductor chip to be connected to the conductive pads, and forming an encapsulant to cover at least one surface of the semiconductor chip.
Public/Granted literature
- US20200066545A1 METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE HAVING REDISTRIBUTION LAYER Public/Granted day:2020-02-27
Information query
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