A method for fabricating a semiconductor device including a skip via connection between metallization levels includes subtractively etching first conductive material to form a first via and a skip via on a first conductive line. The first via and the first conductive line are included within a first metallization level. The skip via is used to connect the first metallization level to a third metallization level above a second metallization level. The method further includes forming, on the first via from second conductive material, a second via disposed on a second conductive line. The second via and the second conductive line are included within the second metallization level.