Invention Grant
- Patent Title: Methods of forming an IC product comprising transistor devices with different threshold voltage levels
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Application No.: US16296469Application Date: 2019-03-08
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Publication No.: US11315835B2Publication Date: 2022-04-26
- Inventor: Wei Hong , Hong Yu , Tao Chu , Bingwu Liu
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L29/06 ; H01L21/308
Abstract:
One illustrative method disclosed herein includes forming a conformal SMCM layer above a conformal high-k gate insulation layer within each of first and second replacement gate cavities (RGC), removing the SMCM layer from the first RGC while leaving the SMCM layer in position within the second RGC, forming a first conformal metal-containing material (MCM) layer above the gate insulation layer within the first RGC and above the SMCM layer in position within the second RGC, removing the first conformal MCM layer and the conformal SMCM layer positioned within the second RGC while leaving the first conformal MCM layer within the first RGC, and forming a second conformal MCM layer above the first conformal MCM layer positioned within the first RGC and above the gate insulation layer positioned within the second RGC.
Public/Granted literature
- US20200286790A1 METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGE LEVELS Public/Granted day:2020-09-10
Information query
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