Invention Grant
- Patent Title: Roughening of a metallization layer on a semiconductor wafer
-
Application No.: US16906586Application Date: 2020-06-19
-
Publication No.: US11322400B2Publication Date: 2022-05-03
- Inventor: Carsten von Koblinski , Tobias Polster
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP19181774 20190621
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3213 ; H01L23/31 ; H01L23/528
Abstract:
A method of manufacturing a semiconductor wafer having a roughened metallization layer surface is described. The method includes immersing the semiconductor wafer in an electrolytic bath. Gas bubbles are generated in the electrolytic bath. A surface of a metallization layer on the semiconductor wafer is electrochemically roughened in the presence of the gas bubbles by applying a reversing voltage between the metallization layer and an electrode of the electrolytic bath.
Information query
IPC分类:
