Invention Grant
- Patent Title: Concurrent manufacture of field effect transistors and bipolar junction transistors with gain tuning
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Application No.: US16720084Application Date: 2019-12-19
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Publication No.: US11322414B2Publication Date: 2022-05-03
- Inventor: Shesh Mani Pandey
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Gibb & Riley, LLC
- Agent Francois Pagette
- Main IPC: H01L21/8249
- IPC: H01L21/8249 ; H01L27/06 ; H01L29/08 ; H01L21/74 ; H01L29/10 ; H01L21/265 ; H01L21/266
Abstract:
Bipolar junction transistors include a collector, a base on the collector, and an emitter on the base. The base is between the collector and the emitter. The emitter comprises first portions and a second portion on the base. The first portions of the emitter are between the second portion of the emitter and the base. The first portions and the second portion comprise doped areas that are doped with the same polarity impurity in different concentrations. The base comprises a doped area that is doped with an opposite polarity impurity from the first and second portions of the emitter. The first portions of the emitter extend from the second portion of the emitter into the base. Specifically, the second portion has a bottom surface contacting the base, and the first portions comprise at least two separate impurity regions extending from the bottom surface of the second portion into the base.
Public/Granted literature
- US20210193526A1 CONCURRENT MANUFACTURE OF FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITH GAIN TUNING Public/Granted day:2021-06-24
Information query
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