Invention Grant
- Patent Title: Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an integrated power module
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Application No.: US16249172Application Date: 2019-01-16
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Publication No.: US11322451B2Publication Date: 2022-05-03
- Inventor: Olaf Hohlfeld , Juergen Hoegerl , Gottfried Beer , Magdalena Hoier , Georg Meyer-Berg
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48 ; H01L23/00 ; H01L25/00 ; H01L23/31 ; H01L21/56 ; H01L23/373 ; H01L23/498
Abstract:
A power semiconductor module includes a power semiconductor die attached to the first metallized side, a passive component attached to the first metallized side, a first isolation layer encapsulating the power semiconductor die and the passive component, a first structured metallization layer on the first isolation layer, and a first plurality of electrically conductive vias extending through the first isolation layer from the first structured metallization layer to the power semiconductor die and the passive component.
Public/Granted literature
Information query
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