Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16223597Application Date: 2018-12-18
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Publication No.: US11322462B2Publication Date: 2022-05-03
- Inventor: Takayuki Tsutsui , Isao Obu
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JPJP2017-245880 20171222,JPJP2018-076757 20180412
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/528 ; H01L23/00 ; H01L49/02 ; H01L29/737 ; H03F3/217 ; H01L27/06 ; H01L23/538 ; H03F1/56 ; H03F3/195 ; H03H7/38

Abstract:
A plurality of unit transistors that are connected in parallel to each other are formed on a substrate. In addition, a ground bump is provided on the substrate. A plurality of first capacitors are each provided for a corresponding one of the plurality of unit transistors and each connect an output electrode of the corresponding one of the plurality of unit transistors and the ground bump to each other.
Public/Granted literature
- US20190198464A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-27
Information query
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