Invention Grant
- Patent Title: Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
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Application No.: US16821565Application Date: 2020-03-17
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Publication No.: US11322583B2Publication Date: 2022-05-03
- Inventor: Sungkeun Lim , Unki Kim , Yuyeong Jo , Yihwan Kim , Jinbum Kim , Pankwi Park , Ilgyou Shin , Seunghun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0061466 20190524
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L21/02

Abstract:
A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.
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Information query
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