Invention Grant
- Patent Title: N-type semiconductor composition, and thin film, organic photoelectric device, image sensor, and electronic device including the same
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Application No.: US16875168Application Date: 2020-05-15
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Publication No.: US11322688B2Publication Date: 2022-05-03
- Inventor: Hiromasa Shibuya , Chul Baik , Yutaka Matsuo , Sung Young Yun , Seon-Jeong Lim , Ji Soo Shin , Gae Hwang Lee , Yeong Suk Choi , Taejin Choi , Hye Rim Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0057222 20190515
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C07D209/56 ; H01L27/30 ; H01L51/42
Abstract:
Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same. In Chemical Formula 1, X, Cy and R1 to R8 are the same as defined in the detailed description.
Information query
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