公开(公告)号：US10249823B2

公开(公告)日：2019-04-02

申请号：US15822400

申请日：2017-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiromasa Shibuya ,  Tadao Yagi ,  Rie Sakurai ,  Yeong Suk Choi ,  Yutaka Matsuo

IPC: C07C23/46 ,  H01L51/00 ,  C07C25/18 ,  H01L51/42 ,  H01L27/30

Abstract: A fullerene derivative may be included in photoelectric devices and image sensor. Optical absorption characteristics of a thin film including the fullerene derivative may be shifted toward a short wavelength compared with those of the thin film including the unsubstituted C60 fullerene, for example, a thin film including the fullerene derivative may be associated with a peak absorption wavelength (λmax) that is be shorter than that of a thin film including the unsubstituted C60 fullerene.

公开(公告)号：US11271162B2

公开(公告)日：2022-03-08

申请号：US16685263

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiromasa Shibuya ,  Yeong Suk Choi ,  Yutaka Matsuo

IPC: H01L51/00 ,  C07C321/28 ,  H01L27/146 ,  H01L27/28 ,  H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same. In Chemical Formula 1, X, Ar, R1 to R3, a, b, and c are the same as defined in the detailed description.

公开(公告)号：US11094885B2

公开(公告)日：2021-08-17

申请号：US16201345

申请日：2018-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiromasa Shibuya ,  Norihito Ishii ,  Yeong Suk Choi ,  Yutaka Matsuo

IPC: H01L51/00 ,  C07D307/93 ,  C09K11/06 ,  C07D307/77 ,  H01L27/30 ,  H01L51/42

Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the fullerene derivative. In Chemical Formula 1, X, Ar, and R1 to R3 are the same as defined in the detailed description.

公开(公告)号：US11322688B2

公开(公告)日：2022-05-03

申请号：US16875168

申请日：2020-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiromasa Shibuya ,  Chul Baik ,  Yutaka Matsuo ,  Sung Young Yun ,  Seon-Jeong Lim ,  Ji Soo Shin ,  Gae Hwang Lee ,  Yeong Suk Choi ,  Taejin Choi ,  Hye Rim Hong

IPC: H01L51/00 ,  C07D209/56 ,  H01L27/30 ,  H01L51/42

Abstract: Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same. In Chemical Formula 1, X, Cy and R1 to R8 are the same as defined in the detailed description.

公开(公告)号：US20200161557A1

公开(公告)日：2020-05-21

申请号：US16685263

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hiromasa Shibuya ,  Yeong Suk Choi ,  Yutaka Matsuo

IPC: H01L51/00 ,  C07C321/28

Abstract: Disclosed are a fullerene derivative including a substituent represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same. In Chemical Formula 1, X, Ar, R1 to R3, a, b, and c are the same as defined in the detailed description.