Invention Grant
- Patent Title: Chamber conditioning and removal processes
-
Application No.: US15852911Application Date: 2017-12-22
-
Publication No.: US11328909B2Publication Date: 2022-05-10
- Inventor: Hanshen Zhang , Zhenjiang Cui , Nitin Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3213 ; H01L21/768 ; H01L23/532 ; H01L23/535
Abstract:
Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.
Public/Granted literature
- US20190198300A1 CHAMBER CONDITIONING AND REMOVAL PROCESSES Public/Granted day:2019-06-27
Information query
