公开(公告)号：US12087595B2

公开(公告)日：2024-09-10

申请号：US17689092

申请日：2022-03-08

申请人： Applied Materials, Inc.

发明人： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/3213 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC分类号： H01L21/32136 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

摘要： Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

公开(公告)号：US20220359214A1

公开(公告)日：2022-11-10

申请号：US17307636

申请日：2021-05-04

申请人： Applied Materials, Inc.

发明人： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/3065 ,  H01L27/1157 ,  H01J37/305

摘要： Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

公开(公告)号：US11121002B2

公开(公告)日：2021-09-14

申请号：US16169249

申请日：2018-10-24

申请人： Applied Materials, Inc.

发明人： Zhenjiang Cui ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/4757 ,  H01L21/768

摘要： Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of a transition-metal-containing material. The methods may also include removing the transition-metal-containing material. The flowing and the contacting may be plasma-free operations.

公开(公告)号：US10861676B2

公开(公告)日：2020-12-08

申请号：US15912404

申请日：2018-03-05

申请人： Applied Materials, Inc.

发明人： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC分类号： H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

摘要： Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber. The methods may further include laterally etching the oxidized metal-containing material lining the portion of the sidewalls of the trench.

公开(公告)号：US20160086816A1

公开(公告)日：2016-03-24

申请号：US14543683

申请日：2014-11-17

申请人： Applied Materials, Inc.

发明人： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

IPC分类号： H01L21/311

CPC分类号： H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

摘要翻译： 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US11769671B2

公开(公告)日：2023-09-26

申请号：US17018206

申请日：2020-09-11

申请人： Applied Materials, Inc.

发明人： Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/3065 ,  C23F1/12

CPC分类号： H01L21/3065 ,  C23F1/12

摘要： Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The hydrogen-containing precursor may be flowed at a flow rate of at least 2:1 relative to the flow rate of the fluorine-containing precursor. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material or a metal. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material or the metal.

公开(公告)号：US20230290647A1

公开(公告)日：2023-09-14

申请号：US17689092

申请日：2022-03-08

申请人： Applied Materials, Inc.

发明人： Baiwei Wang ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/3213 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11556

CPC分类号： H01L21/32136 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11556

摘要： Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

公开(公告)号：US20230010978A1

公开(公告)日：2023-01-12

申请号：US17373161

申请日：2021-07-12

申请人： Applied Materials, Inc.

发明人： Baiwei Wang ,  Xiaolin C. Chen ,  Rohan Puligoru Reddy ,  Oliver Jan ,  Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/3213 ,  H01J37/32

摘要： Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

公开(公告)号：US20220139720A1

公开(公告)日：2022-05-05

申请号：US17574733

申请日：2022-01-13

申请人： Applied Materials, Inc.

发明人： Keenan N. Woods ,  Zhenjiang Cui ,  Mark Saly

IPC分类号： H01L21/311

摘要： Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

公开(公告)号：US20160086815A1

公开(公告)日：2016-03-24

申请号：US14543618

申请日：2014-11-17

申请人： Applied Materials, Inc.

发明人： Mandar Pandit ,  Xikun Wang ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC分类号： H01L21/311

CPC分类号： H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

摘要翻译： 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用从含氟前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。