Invention Grant
- Patent Title: Power semiconductor devices with high temperature electrical insulation
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Application No.: US16912890Application Date: 2020-06-26
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Publication No.: US11328973B2Publication Date: 2022-05-10
- Inventor: David Richard Esler , Emad A. Andarawis
- Applicant: GENERAL ELECTRIC COMPANY
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Agency: Dinsmore & Shohl LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L23/29

Abstract:
A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.
Public/Granted literature
- US20210407878A1 POWER SEMICONDUCTOR DEVICES WITH HIGH TEMPERATURE ELECTRICAL INSULATION Public/Granted day:2021-12-30
Information query
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