Invention Grant
- Patent Title: Backside illuminated image sensor device with shielding layer
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Application No.: US14073580Application Date: 2013-11-06
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Publication No.: US11335721B2Publication Date: 2022-05-17
- Inventor: Volume Chien , Su-Hua Chang , Chia-Yu Wei , Zen-Fong Huang , Chi-Cherng Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0216
Abstract:
A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.
Public/Granted literature
- US20150123225A1 BACKSIDE ILLUMINATOR IMAGE SENSOR DEVICE WITH SHIELDING LAYER Public/Granted day:2015-05-07
Information query
IPC分类:
