Invention Grant
- Patent Title: Semiconductor memory device and operating method of semiconductor memory device to reduce duty errors
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Application No.: US17012723Application Date: 2020-09-04
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Publication No.: US11342011B2Publication Date: 2022-05-24
- Inventor: Hun-Dae Choi , Hwapyong Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0083006 20180717
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C8/06 ; G11C7/06 ; G11C8/10 ; G11C7/10

Abstract:
Inventive concepts relates to a semiconductor memory device. The semiconductor memory device may include a first buffer configured to receive a first signal, a second buffer configured to receive a second signal, a detector configured to compare a first phase of the first signal received by the first buffer to a second phase of the second signal received by the second buffer and to generate a detection signal, and a corrector activated or inactivated in response to a detection signal. The corrector may be configured to correct the first signal received by the first buffer and the second signal received by the second buffer, when the corrector is activated in response to the detection signal.
Information query