Invention Grant
- Patent Title: Integrated circuit device with low threshold voltage
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Application No.: US16573866Application Date: 2019-09-17
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Publication No.: US11342231B2Publication Date: 2022-05-24
- Inventor: Chung-Liang Cheng , Ziwei Fang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L21/02

Abstract:
A method of manufacturing a semiconductor device is provided. A substrate is provided. The substrate has a first region and a second region. An n-type work function layer is formed over the substrate in the first region but not in the second region. A p-type work function layer is formed over the n-type work function layer in the first region, and over the substrate in the second region. The p-type work function layer directly contacts the substrate in the second region. And the p-type work function layer includes a metal oxide.
Public/Granted literature
- US20210082918A1 Integrated Circuit Device With Low Threshold Voltage Public/Granted day:2021-03-18
Information query
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