A semiconductor device includes a semiconductor die, a semiconductor integrated circuit, an outer crack detection structure, a plurality of inner crack detection structures and a plurality of path selection circuits. The semiconductor die includes a central region and an edge region surrounding the central region. The semiconductor integrated circuit is in a plurality of sub regions of the central region. The outer crack detection structure is in the edge region. The plurality of inner crack detection structures are respectively in the plurality of sub regions, respectively. The path selection circuits are configured to control an electrical connection between the outer crack detection structure and the plurality of inner crack detection structures. A crack in the central region in addition to a crack in the edge region may be detected efficiently through selective electrical connection of the outer crack detection structure and the inner crack detection structures.