Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate and display device
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Application No.: US16767247Application Date: 2019-12-18
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Publication No.: US11342431B2Publication Date: 2022-05-24
- Inventor: Tongshang Su , Dongfang Wang , Qinghe Wang , Ning Liu , Yongchao Huang , Yu Ji , Zheng Wang , Liangchen Yan
- Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Anhui; CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN201910148181.5 20190227
- International Application: PCT/CN2019/126289 WO 20191218
- International Announcement: WO2020/173187 WO 20200903
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/786 ; H01L29/49 ; H01L29/66 ; H01L29/40 ; H01L21/223 ; H01L21/3213 ; H01L21/383 ; H01L21/4763 ; H01L27/12

Abstract:
A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
Public/Granted literature
- US20210167181A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2021-06-03
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