-
公开(公告)号：US11469394B2
公开(公告)日：2022-10-11
申请号：US17051323
申请日：2020-03-02
发明人： Leilei Cheng , Tongshang Su , Qinghe Wang , Guangyao Li , Wei Song , Ning Liu , Yang Zhang , Yongchao Huang
摘要： The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.
-
公开(公告)号：US11347148B2
公开(公告)日：2022-05-31
申请号：US16086990
申请日：2018-02-12
发明人： Wei Li , Bin Zhou , Jun Liu , Ning Liu , Yang Zhang , Yingbin Hu
摘要： A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.
-
公开(公告)号：US11069725B2
公开(公告)日：2021-07-20
申请号：US16399508
申请日：2019-04-30
IPC分类号： H01L27/12 , H01L21/311 , H01L21/3213
摘要： A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.
-
4.发明申请公开(公告)号：US20210167181A1
公开(公告)日：2021-06-03
申请号：US16767247
申请日：2019-12-18
发明人： Tongshang Su , Dongfang Wang , Qinghe Wang , Ning Liu , Yongchao Huang , Yu Ji , Zheng Wang , Liangchen Yan
IPC分类号： H01L29/423 , H01L29/786 , H01L29/49 , H01L29/66 , H01L29/40
摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
-
5.发明申请公开(公告)号：US20200152458A1
公开(公告)日：2020-05-14
申请号：US16442830
申请日：2019-06-17
发明人： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
摘要： A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
-
公开(公告)号：US11559592B2
公开(公告)日：2023-01-24
申请号：US16442860
申请日：2019-06-17
发明人： Guangyao Li , Luke Ding , Leilei Cheng , Yingbin Hu , Jingang Fang , Ning Liu , Qinghe Wang , Dongfang Wang , Liangchen Yan
IPC分类号： A61L2/03 , C01B32/182
摘要： A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.
-
7.发明授权公开(公告)号：US11335710B2
公开(公告)日：2022-05-17
申请号：US16936447
申请日：2020-07-23
发明人： Qinghe Wang , Tongshang Su , Yongchao Huang , Yingbin Hu , Yang Zhang , Haitao Wang , Ning Liu , Guangyao Li , Zheng Wang , Yu Ji , Jinliang Hu , Wei Song , Jun Cheng , Liangchen Yan
摘要： A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.
-
8.发明授权公开(公告)号：US11177296B2
公开(公告)日：2021-11-16
申请号：US16644261
申请日：2019-04-17
发明人： Ning Liu
摘要： An array substrate, a display device, a thin film transistor, and a method for manufacturing an array substrate are disclosed. The array substrate includes a base substrate, an active layer, and a cover layer. The active layer is on the base substrate, the cover layer is on a side, away from the base substrate, of the active layer and covers the array substrate, the cover layer includes a metal conductive portion and a transparent insulating metal oxide portion, the metal conductive portion and the transparent insulating metal oxide portion include an identical metal element, and the metal conductive portion is electrically connected to the active layer.
-
公开(公告)号：US20210066353A1
公开(公告)日：2021-03-04
申请号：US16928562
申请日：2020-07-14
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Qinghe Wang , Jun Wang , Ning Liu , Guangyao Li
IPC分类号： H01L27/12 , H01L23/552
摘要： An array substrate and a display device are provided in embodiments of the present disclosure. The array substrate includes a base substrate, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source-drain electrode electrically conductive layer, a passivation layer, and a first light shielding layer. The first light shielding layer is disposed on a side of the passivation layer facing away from the interlayer insulating layer. An orthographic projection of the first light shielding layer on the base substrate at least partially overlaps with an orthographic projection of the active layer on the base substrate, and the first light shielding layer is formed by a photoresist material.
-
10.发明授权公开(公告)号：US10777683B2
公开(公告)日：2020-09-15
申请号：US16403860
申请日：2019-05-06
发明人： Yang Zhang , Luke Ding , Bin Zhou , Haitao Wang , Ning Liu , Jingang Fang , Yongchao Huang , Liangchen Yan
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L27/32
摘要： A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
-
-
-
-
-
-
-
-
-
搜索结果
30 条记录 (耗时 0.033 秒)