Invention Grant
- Patent Title: Magnetic memory devices for reducing electrical shorts between magnetic tunnel junction patterns
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Application No.: US16789525Application Date: 2020-02-13
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Publication No.: US11342495B2Publication Date: 2022-05-24
- Inventor: Junghoon Bak , Woojin Kim , Junghwan Moon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0081509 20190705
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01F10/32 ; H01L43/10
Abstract:
Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.
Public/Granted literature
- US20210005806A1 MAGNETIC MEMORY DEVICES Public/Granted day:2021-01-07
Information query
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