Invention Grant
- Patent Title: Method and device for locating the origin of a defect affecting a stack of thin layers deposited on a substrate
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Application No.: US16309184Application Date: 2017-06-22
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Publication No.: US11352691B2Publication Date: 2022-06-07
- Inventor: Bernard Nghiem , Yohan Faucillon , Gregoire Mathey , Thierry Kauffmann
- Applicant: SAINT-GOBAIN GLASS FRANCE
- Applicant Address: FR Courbevoie
- Assignee: SAINT-GOBAIN GLASS FRANCE
- Current Assignee: SAINT-GOBAIN GLASS FRANCE
- Current Assignee Address: FR Courbevoie
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1655951 20160627
- International Application: PCT/FR2017/051666 WO 20170622
- International Announcement: WO2018/002482 WO 20180104
- Main IPC: C23C14/18
- IPC: C23C14/18 ; C23C14/54 ; G01N21/88 ; G02B1/10 ; G06T7/00 ; G01N21/84 ; G01N21/896 ; G02B5/28 ; C23C14/35

Abstract:
A method for locating, in a deposition line including a succession of compartments, an origin of a defect affecting a stack of thin layers deposited on a substrate in the compartments, in which each thin layer is deposited in one or more successive compartments of the deposition line and pieces of debris remaining on the surface of a thin layer deposited in a compartment act as masks for the subsequent depositions of thin layers and are the origin of defects, includes obtaining at least one image showing the defect, determining, from the at least one image, a signature of the defect, the signature containing at least one characteristic representative of the defect, and identifying at least one compartment of the deposition line liable to be the origin of the defect from the signature of the defect and using reference signatures associated with the compartments of the deposition line.
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Information query
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