Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.