公开(公告)号：US10782254B2

公开(公告)日：2020-09-22

申请号：US16039647

申请日：2018-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyon-Seok Song ,  In-Yong Kang ,  Jong-Ju Park

IPC: G01N23/2251 ,  G06T7/00 ,  H01J37/28 ,  G03F1/86 ,  H01L21/67 ,  H01L21/66

Abstract: In a method of detecting a defect, a region of a substrate may be primarily scanned using a first electron beam to detect a first defect. A remaining region of the substrate, which may be defined by excluding a portion in which the first defect may be positioned from the region of the substrate, may be secondarily scanned using a second electron beam to detect a second defect. Thus, the portion with the defect may not be scanned in a following scan process so that a scanning time may be remarkably decreased.

公开(公告)号：US11353413B2

公开(公告)日：2022-06-07

申请号：US17181012

申请日：2021-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyon-Seok Song ,  In-Yong Kang ,  Il-Yong Jang

IPC: G01N23/2251 ,  G01B15/00 ,  G03F7/20

Abstract: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.

公开(公告)号：US10955369B2

公开(公告)日：2021-03-23

申请号：US16437468

申请日：2019-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyon-Seok Song ,  In-Yong Kang ,  Il-Yong Jang

IPC: G01N23/2251 ,  G01B15/00 ,  G03F7/20

Abstract: Mask inspection apparatuses and/or mask inspection methods are provided that enable quick and accurate inspection of a registration of a pattern on a mask while a defect of the mask and the registration of the pattern are inspected simultaneously. The mask inspection apparatus may include a stage configured to receive a mask for inspection; an e-beam array including a plurality of e-beam irradiators configured to irradiate e-beams to the mask and detectors configured to detect electrons emitted from the mask; and a processor configured to process signals from the detectors. A defect of the mask may be detected through processing of the signal and registrations of patterns on the mask may be inspected based on positional information regarding the e-beam irradiators.