Invention Grant
- Patent Title: Methods of thinning silicon on epoxy mold compound for radio frequency (RF) applications
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Application No.: US16579723Application Date: 2019-09-23
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Publication No.: US11355358B2Publication Date: 2022-06-07
- Inventor: Guan Huei See , Prayudi Lianto , Yu Gu
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/3105

Abstract:
Embodiments of methods for processing a semiconductor substrate are described herein. In some embodiments, a method of processing a semiconductor substrate includes removing material from a backside of a reconstituted substrate having a plurality of dies to expose at least one die of the plurality of dies; etching the backside of the reconstituted substrate to remove material from the exposed at least one die; and depositing a first layer of material on the backside of the reconstituted substrate and the exposed at least one die.
Public/Granted literature
- US20210090905A1 METHODS OF THINNING SILICON ON EPOXY MOLD COMPOUND FOR RADIO FREQUENCY (RF) APPLICATIONS Public/Granted day:2021-03-25
Information query
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