发明授权
- 专利标题: Stable AIGS films
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申请号: US17510638申请日: 2021-10-26
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公开(公告)号: US11360250B1公开(公告)日: 2022-06-14
- 发明人: Wenzhou Guo , Ravisubhash Tangirala , Chunming Wang , Charles Hotz , Alain Barron
- 申请人: Nanosys, Inc.
- 申请人地址: US CA Milpitas
- 专利权人: Nanosys, Inc.
- 当前专利权人: Nanosys, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G02B5/22
- IPC分类号: G02B5/22 ; C01G15/00 ; G02B1/04 ; B82Y20/00
摘要:
Disclosed are stable films comprising Ag, In, Ga, and S (AIGS) nanostructures, or more one metal alkoxides, one or more metal alkoxide hydrolysis products, one or more metal halides, one or more metal halide hydrolysis products, one or more organometallic compounds, or one or more organometallic hydrolysis products, or combinations thereof, and at least one ligand bound to the nanostructures. In some embodiments, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm. In some embodiments, the nanostructures have a photon conversion efficiency (PCE) of at least 30% after being stored for 24 hours under yellow light and air storage conditions.
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