Invention Grant
- Patent Title: Redundant cloud memory storage for a memory subsystem
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Application No.: US16434602Application Date: 2019-06-07
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Publication No.: US11360868B2Publication Date: 2022-06-14
- Inventor: Federico Pio
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Nicholson De Vos Webster & Elliott LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/20 ; G06F11/07 ; G06F3/06

Abstract:
A method for managing memory element failures in a memory subsystem is described. The method includes detecting, by the memory subsystem, a failed memory element in the memory subsystem and transmitting a redundant memory request based on detection of the failed memory element. The redundant memory request seeks to utilize memory storage in an external storage system in place of the failed memory element in the memory subsystem. Thereafter, the memory subsystem receives, from the external storage system, a redundant memory request confirmation, which indicates that the redundant memory request has been fulfilled and includes an address of a location in the external storage system. In response to receipt of the redundant memory request confirmation, the memory subsystem updates memory management information to map a logical address, which was previously mapped to the failed memory element, to the location in the external storage system.
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