- Patent Title: Radiation detection and method of fabricating radiation detector
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Application No.: US16761858Application Date: 2019-06-28
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Publication No.: US11366240B2Publication Date: 2022-06-21
- Inventor: Kui Liang
- Applicant: Beijing BOE Technology Development Co., Ltd. , BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing; CN Beijing
- Assignee: Beijing BOE Technology Development Co., Ltd.,BOE Technology Group Co., Ltd.
- Current Assignee: Beijing BOE Technology Development Co., Ltd.,BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing; CN Beijing
- Agency: Intellectual Valley Law, P.C.
- International Application: PCT/CN2019/093830 WO 20190628
- International Announcement: WO2020/258282 WO 20201230
- Main IPC: G01T1/20
- IPC: G01T1/20 ; G01T1/24 ; H01L27/146

Abstract:
A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a thin film transistor on a base substrate; an inter-layer dielectric layer on a side of the thin film transistor away from the base substrate; a sensing electrode and a bias electrode on a side of the inter-layer dielectric layer away from the base substrate, wherein the sensing electrode extends through the inter-layer dielectric layer to electrically connect to the thin film transistor; a passivation layer on a side of the sensing electrode and the bias electrode away from the inter-layer dielectric layer, wherein the passivation layer includes a first portion and a second portion; and a radiation detection layer on a side of the passivation layer away from the base substrate. The first portion and the second portion form a substantially flat contacting surface.
Public/Granted literature
- US20210405216A1 RADIATION DETECTION AND METHOD OF FABRICATING RADIATION DETECTOR Public/Granted day:2021-12-30
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