Invention Grant
- Patent Title: Accessing memory units in a memory bank
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Application No.: US16951234Application Date: 2020-11-18
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Publication No.: US11370223B2Publication Date: 2022-06-28
- Inventor: Boon Bing Ng , Noorashekin Binte Jamil
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Spring
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Spring
- Agency: Fabian VanCott
- Main IPC: B41J2/17
- IPC: B41J2/17 ; B41J2/175 ; G11C16/06

Abstract:
The present subject matter relates to accessing memory units in a memory bank. In an example implementation, a bank select transistor is common to a plurality of memory units in a memory bank. The bank select transistor facilitates accessing a memory unit of the plurality of memory units based on a bank select signal.
Public/Granted literature
- US20210070057A1 ACCESSING MEMORY UNITS IN A MEMORY BANK Public/Granted day:2021-03-11
Information query
IPC分类: