Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US16826995Application Date: 2020-03-23
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Publication No.: US11373942B2Publication Date: 2022-06-28
- Inventor: Junyoung Ko , Senyun Kim , Younghoon Ro
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0099316 20190814
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/14 ; H01L23/31 ; H01L23/00 ; H01L21/48

Abstract:
A semiconductor device comprises a substrate, a semiconductor chip on the substrate, and first and second leads between the substrate and the semiconductor chip. The first and second leads extend from an edge of the substrate toward below the semiconductor chip along a first direction parallel to a top surface of the substrate. The first lead includes a first bump connector and a first segment. The second lead includes a second bump connector. The first bump connector is spaced apart in the first direction from the second bump connector. The first segment of the first lead is spaced apart in a second direction from the second bump connector. The second direction is parallel to the top surface of the substrate and perpendicular to the first direction. A thickness of the first segment of the first lead is less than that of the second bump connector.
Public/Granted literature
- US20210050291A1 SEMICONDUCTOR DEVICES Public/Granted day:2021-02-18
Information query
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