Invention Grant
- Patent Title: Transistors with hybrid source/drain regions
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Application No.: US16937821Application Date: 2020-07-24
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Publication No.: US11374002B2Publication Date: 2022-06-28
- Inventor: Wenjun Li , Man Gu
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L21/8234

Abstract:
Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A semiconductor substrate includes a first region, a second region, and a first source/drain region in the first region. A semiconductor fin is located over the second region of the semiconductor substrate. The semiconductor fin extends laterally along a longitudinal axis to connect to the first region of the semiconductor substrate. The structure includes a second source/drain region including an epitaxial semiconductor layer coupled to the first semiconductor fin, and a gate structure that extends over the semiconductor fin. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure.
Public/Granted literature
- US20220028854A1 TRANSISTORS WITH HYBRID SOURCE/DRAIN REGIONS Public/Granted day:2022-01-27
Information query
IPC分类: