Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17093777Application Date: 2020-11-10
-
Publication No.: US11380656B2Publication Date: 2022-07-05
- Inventor: Hiroshi Ishino
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JPJP2018-101717 20180528
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/367 ; H01L23/00 ; H02P27/06

Abstract:
The semiconductor device includes a semiconductor element, a first conductive member, a second conductive member, an insulating member, a first main terminal, and a second main terminal. The first main terminal and the second main terminal, respectively, extend from the first conductive member and the second conductive member. The first main terminal and the second main terminal, respectively, have a first projecting portion and a second projecting portion projecting outside of the insulating member. The first projecting portion and the second projecting portion, respectively, have a first facing portion and a second facing portion at which plate surfaces of the first and second projecting portions face each other across a gap, and a first non-facing portion and a second non-facing portion at which the plate surfaces of the first and second projecting portions do not face each other.
Public/Granted literature
- US20210057389A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-02-25
Information query
IPC分类: