- Patent Title: Memory access module for performing a plurality of sensing operations to generate digital values of a storage cell in order to perform decoding of the storage cell
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Application No.: US17075689Application Date: 2020-10-20
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Publication No.: US11386952B2Publication Date: 2022-07-12
- Inventor: Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Hsinchu County
- Agent Winston Hsu
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/26 ; G06F3/06 ; G11C16/08
Abstract:
A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
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