Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16581859Application Date: 2019-09-25
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Publication No.: US11387083B2Publication Date: 2022-07-12
- Inventor: Hidehito Azumano
- Applicant: Shibaura Mechatronics Corporation
- Applicant Address: JP Yokohama
- Assignee: Shibaura Mechatronics Corporation
- Current Assignee: Shibaura Mechatronics Corporation
- Current Assignee Address: JP Yokohama
- Agency: Pearne & Gordon LLP
- Priority: JPJP2018-183465 20180928
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67

Abstract:
According to one embodiment, a plasma processing apparatus includes a chamber, a plasma generator, a gas supplier supplying, a placement part, a depressurization part, and a supporting part. The supporting part includes a mounting part positioned below the placement part and provided with the placement part, and a beam extending from a side surface of the chamber toward a center axis of the chamber. One end of the beam is connected to a side surface of the mounting part. The beam includes a space connected to an outside space of the chamber. A following formula is satisfied, t1>t2, when a thickness of a side portion on the placement part side of side portions of the beam is taken as t1, a thickness of a side portion on an opposite side of the placement part side of the beam is taken as t2.
Information query