Invention Grant
- Patent Title: IC having a metal ring thereon for stress reduction
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Application No.: US16859530Application Date: 2020-04-27
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Publication No.: US11387155B2Publication Date: 2022-07-12
- Inventor: Amit Sureshkumar Nangia , Sreenivasan Kalyani Koduri , Siva Prakash Gurrum , Christopher Daniel Manack
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Ronald O. Neerings; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/16
- IPC: H01L23/16 ; H01L23/00

Abstract:
An integrated circuit (IC) includes a substrate including circuitry configured for a function, the circuitry including at least one stress sensitive circuit portion, with at least a portion of nodes in the circuitry electrically coupled to bond pads provided by a top metal layer. A metal wall that is ring-shaped is positioned above the top metal layer that is not electrically coupled to the circuitry. The stress sensitive circuit portion is with at least a majority of its area within an inner area of the substrate that is framed by the metal wall to provide a cavity.
Public/Granted literature
- US20210183717A1 IC HAVING A METAL RING THEREON FOR STRESS REDUCTION Public/Granted day:2021-06-17
Information query
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