Invention Grant
- Patent Title: Semiconductor device structure and methods of forming the same
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Application No.: US16915930Application Date: 2020-06-29
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Publication No.: US11387233B2Publication Date: 2022-07-12
- Inventor: Huan-Chieh Su , Chun-Yuan Chen , Pei-Yu Wang , Cheng-Chi Chuang , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ Carr Law Office
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L27/088 ; H01L21/762 ; H01L21/8234 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L23/528 ; H01L23/532
Abstract:
A semiconductor device structure, along with methods of forming such, are described. The structure includes a source region, a drain region, and a gate electrode layer disposed between the source region and the drain region. The gate electrode layer includes a first surface facing the source region, and the first surface includes an edge portion having a first height. The gate electrode layer further includes a second surface opposite the first surface and facing the drain region. The second surface includes an edge portion having a second height. The second height is different from the first height.
Public/Granted literature
- US20210407994A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2021-12-30
Information query
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