- 专利标题： Nanosheet transistor device with bottom isolation
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申请号： US16567767申请日： 2019-09-11
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公开(公告)号： US11387319B2公开(公告)日： 2022-07-12
- 发明人: Ruilong Xie , Veeraraghavan S. Basker , Andrew M. Greene , Pietro Montanini
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Robert Sullivan
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L29/78
摘要：
A method of forming a nanosheet transistor device is provided. The method includes forming a segment stack of alternating intermediate sacrificial segments and nanosheet segments on a bottom sacrificial segment, wherein the segment stack is on a mesa and a nanosheet template in on the segment stack. The method further includes removing the bottom sacrificial layer to form a conduit, and forming a fill layer in the conduit and encapsulating at least a portion of the segment stack.
公开/授权文献
- US20210074809A1 NANOSHEET TRANSISTOR DEVICE WITH BOTTOM ISOLATION 公开/授权日：2021-03-11
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