A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.