Invention Grant
- Patent Title: Field effect transistor (FET) comprising inner spacers and voids between channels
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Application No.: US16868376Application Date: 2020-05-06
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Publication No.: US11411092B2Publication Date: 2022-08-09
- Inventor: Junjing Bao , Ye Lu , Peijie Feng , Chenjie Tang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H01L29/49 ; H01L27/092 ; H01L29/423 ; H01L21/02 ; H01L21/764

Abstract:
An integrated device that includes a substrate and a first transistor formed over the substrate. The first transistor includes a first source disposed over the substrate, a first drain disposed over the substrate, a first plurality of channels coupled to the first source and the first drain, where the first plurality of channels is located between the first source and the first drain; at least one inner spacer located between two adjacent channels from the first plurality of channels; at least two voids located between the two adjacent channels; and a first gate surrounding the first plurality of channels.
Public/Granted literature
- US20210351276A1 FIELD EFFECT TRANSISTOR (FET) COMPRISING INNER SPACERS AND VOIDS BETWEEN CHANNELS Public/Granted day:2021-11-11
Information query
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