Invention Grant
- Patent Title: Pressure sensor
-
Application No.: US16345174Application Date: 2017-10-18
-
Publication No.: US11422043B2Publication Date: 2022-08-23
- Inventor: Yoshitaka Nakamura , Tsutomu Furuta , Hiroyoshi Yoden , Mitsuo Yaguchi , Takeshi Ueda
- Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2016-208521 20161025,JPJP2017-078902 20170412
- International Application: PCT/JP2017/037651 WO 20171018
- International Announcement: WO2018/079363 WO 20180503
- Main IPC: G01L1/00
- IPC: G01L1/00 ; G01L1/20 ; B32B9/04 ; C01G23/047 ; G01K11/00 ; G01L1/24 ; G01L9/02 ; G01L11/02 ; G01N25/02 ; H01L29/84 ; C01G23/04 ; B32B9/00

Abstract:
A pressure sensor 1 according to the first aspect of the invention includes: a substrate 50; and a functional element 40 which is laid on the substrate 50 and is composed of functional titanium oxide including crystal grains of at least one of β-phase trititanium pentoxide (β-Ti3O5) and λ-phase trititanium pentoxide (λ-Ti3O5) and having the property that at least a portion of crystal grains of at least one of β-phase trititanium pentoxide (β-Ti3O5) and λ-phase trititanium pentoxide (λ-Ti3O5) change into crystal grains of titanium dioxide (TiO2) when the functional titanium oxide is heated to 350° C. or higher. The substrate 50 includes a substrate thin-film section 51 having a thin film form in which the thickness in the stacking direction of the substrate 50 and the functional element 40 is smaller than that in the other directions.
Public/Granted literature
- US20190285489A1 PRESSURE SENSOR Public/Granted day:2019-09-19
Information query