- 专利标题： Semiconductor device and method for manufacturing semiconductor device
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申请号： US17256341申请日： 2019-06-25
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公开(公告)号： US11424369B2公开(公告)日： 2022-08-23
- 发明人: Shunpei Yamazaki , Haruyuki Baba , Naoki Okuno , Yoshihiro Komatsu , Toshikazu Ohno
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JPJP2018-129050 20180706,JPJP2018-132300 20180712,JPJP2018-156319 20180823,JPJP2018-168236 20180907,JPJP2018-224773 20181130,JPJP2019-030032 20190222,JPJP2019-042602 20190308
- 国际申请： PCT/IB2019/055318 WO 20190625
- 国际公布： WO2020/008296 WO 20200109
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/786 ; H01L29/49 ; H01L29/51
摘要：
A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.
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