Invention Grant
- Patent Title: Microelectronic devices designed with 3D stacked ultra thin package modules for high frequency communications
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Application No.: US16465132Application Date: 2016-12-30
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Publication No.: US11430751B2Publication Date: 2022-08-30
- Inventor: Aleksandar Aleksov , Georgios C. Dogiamis , Telesphor Kamgaing , Sasha N. Oster
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2016/069623 WO 20161230
- International Announcement: WO2018/125242 WO 20180705
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/31 ; H01L23/538 ; H01L23/552 ; H01L25/16 ; H01Q1/22 ; H01Q1/24 ; H01Q1/52
Abstract:
Embodiments of the invention include a microelectronic device that includes a first ultra thin substrate formed of organic dielectric material and conductive layers, a first mold material to integrate first radio frequency (RF) components with the first substrate, and a second ultra thin substrate being coupled to the first ultra thin substrate. The second ultra thin substrate formed of organic dielectric material and conductive layers. A second mold material integrates second radio frequency (RF) components with the second substrate.
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