Invention Grant
- Patent Title: SRAM with robust charge-transfer sense amplification
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Application No.: US17008476Application Date: 2020-08-31
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Publication No.: US11437091B2Publication Date: 2022-09-06
- Inventor: Changho Jung , Percy Dadabhoy , Arun Babu Pallerla
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: G11C11/419
- IPC: G11C11/419

Abstract:
A charge-transfer transistor couples between a bit line and a sense node for a sense amplifier. During a read operation, a charge-transfer driver drives a gate voltage of the charge-transfer transistor to control whether the charge-transfer transistor conducts during a charge-transfer period. To assist the charge-transfer by the charge-transfer transistor, a first and second cross-coupled transistor are coupled between the bit line and a complement bit line.
Public/Granted literature
- US20220068373A1 SRAM WITH ROBUST CHARGE-TRANSFER SENSE AMPLIFICATION Public/Granted day:2022-03-03
Information query
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