Invention Grant
- Patent Title: Buried channel metal-oxide-semiconductor field-effect transistor (MOSFET) and forming method thereof
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Application No.: US16934030Application Date: 2020-07-21
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Publication No.: US11437512B2Publication Date: 2022-09-06
- Inventor: Chang-Po Hsiung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202010558380.6 20200618
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238
Abstract:
A buried channel MOSFET includes a dielectric layer, a gate and a buried channel region. The dielectric layer having a recess is disposed on a substrate. The gate is disposed in the recess, wherein the gate includes a first work function metal layer having a “-” shaped cross-sectional profile, and a minimum distance between each sidewalls of the first work function metal layer and the nearest sidewall of the recess is larger than zero. The buried channel region is located in the substrate right below the gate. The present invention provides a method of forming said buried channel MOSFET.
Public/Granted literature
- US20210399132A1 BURIED CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) AND FORMING METHOD THEREOF Public/Granted day:2021-12-23
Information query
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